onsemi ISL9N307AS3ST

onsemi · FETs & Power MOSFETs · MPN ISL9N307AS3ST

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)75nC@10V
Output Capacitance(Coss)580pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)11.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3nF
TypeN-Channel

Technical details

30V 75A 3V 100W 11.5mΩ@4.5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS

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