onsemi · FETs & Power MOSFETs · MPN ISL9N302AS3
No reviews yet — be the first to review onsemi ISL9N302AS3.
| Gate Charge(Qg) | 300nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 345W |
| RDS(on) | 2.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11nF |
30V 75A 3V 345W 2.3mΩ@10V 1 N-channel I2PAK(TO-262) Single FETs, MOSFETs RoHS