onsemi ISL9N302AP3

onsemi · FETs & Power MOSFETs · MPN ISL9N302AP3

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Specifications

Gate Charge(Qg)300nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)2nF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation345W
Reverse Transfer Capacitance (Crss@Vds)6pF
RDS(on)3.3mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)11nF
TypeN-Channel

Technical details

30V 75A 3V 345W 3.3mΩ@4.5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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