onsemi · FETs & Power MOSFETs · MPN ISL9N2357D3ST
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 130nC@10V |
| Output Capacitance(Coss) | 526pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 355pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.6nF |
| Type | N-Channel |
30V 35A 4V 100W 7mΩ@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs RoHS