onsemi · FETs & Power MOSFETs · MPN IRLM110ATF
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| Gate Charge(Qg) | 5.5nC@5V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 1.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 2.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 440mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 235pF |
100V 1.5A 2V 2.2W 440mΩ@5V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS