onsemi IRFW730BTM

onsemi · FETs & Power MOSFETs · MPN IRFW730BTM

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)5.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation73W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

400V 5.5A 4V 73W 1Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

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