onsemi IRFW720BTM

onsemi · FETs & Power MOSFETs · MPN IRFW720BTM

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Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)72pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation49W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.75Ω@10V
Number1 N-channel
Input Capacitance(Ciss)600pF
TypeN-Channel

Technical details

400V 3.3A 4V 49W 1.75Ω@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS

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