onsemi · FETs & Power MOSFETs · MPN IRFW640BTM
No reviews yet — be the first to review onsemi IRFW640BTM.
| Gate Charge(Qg) | 58nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 139W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
| Type | N-Channel |
200V 18A 4V 139W 180mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs