onsemi · FETs & Power MOSFETs · MPN IRFW610BTM
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| Gate Charge(Qg) | 9.3nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 40pF |
| Current - Continuous Drain(Id) | 3.3A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 1.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 225pF |
| Type | N-Channel |
200V 3.3A 4V 38W 1.5Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs