onsemi IRFR330BTM

onsemi · FETs & Power MOSFETs · MPN IRFR330BTM

No reviews yet — be the first to review onsemi IRFR330BTM.

Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)4.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)26pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

400V 4.5A 4V 48W 1Ω@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs