onsemi IRFR220BTM

onsemi · FETs & Power MOSFETs · MPN IRFR220BTM

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)4.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation40W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)390pF
TypeN-Channel

Technical details

200V 4.6A 4V 40W 800mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs

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