onsemi IRFR120

onsemi · FETs & Power MOSFETs · MPN IRFR120

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)130pF
Current - Continuous Drain(Id)8.4A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)270mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

100V 8.4A 4V 50W 270mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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