onsemi · FETs & Power MOSFETs · MPN IRFR110ATM
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| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 65pF |
| Current - Continuous Drain(Id) | 4.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 400mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 240pF |
| Type | N-Channel |
100V 4.7A 4V 2.5W 400mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS