onsemi IRFM120ATF

onsemi · FETs & Power MOSFETs · MPN IRFM120ATF

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)2.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.4W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)200mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)480pF
TypeN-Channel

Technical details

N-Channel 100V 2.3A 2.4W Surface Mount SOT-223

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