onsemi IRF740B

onsemi · FETs & Power MOSFETs · MPN IRF740B

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Specifications

Gate Charge(Qg)53nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation5.5W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)540mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

400V 10A 4V 5.5W 540mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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