onsemi IRF644B-FP001

onsemi · FETs & Power MOSFETs · MPN IRF644B-FP001

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Specifications

Gate Charge(Qg)60nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)195pF
Current - Continuous Drain(Id)14A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation139W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

250V 14A 4V 139W 280mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

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