onsemi IRF634B-FP001

onsemi · FETs & Power MOSFETs · MPN IRF634B-FP001

No reviews yet — be the first to review onsemi IRF634B-FP001.

Specifications

Gate Charge(Qg)38nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)8.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation74W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

250V 8.1A 4V 74W 450mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs