onsemi IRF630A

onsemi · FETs & Power MOSFETs · MPN IRF630A

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Specifications

Gate Charge(Qg)22nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation72W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF

Technical details

200V 9A 4V 72W 400mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs

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