onsemi IRF620B

onsemi · FETs & Power MOSFETs · MPN IRF620B

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)16nC@10V
Output Capacitance(Coss)65pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation47W
Reverse Transfer Capacitance (Crss@Vds)13pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)390pF
TypeN-Channel

Technical details

200V 5A 4V 47W 800mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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