onsemi · Transistors (BJTs) · MPN IMD10AMT1G
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| Current - Collector Cutoff | 100nA |
|---|---|
| Transition frequency(fT) | - |
| Emitter-Base Voltage VEBO | 5V |
| DC Current Gain | 100 |
| Vce Saturation(VCE(sat)) | 300mV@10mA,1mA |
| Output Voltage(VO(on)) | - |
| Input Resistor | - |
| Resistor Ratio | 0.012 |
| Pd - Power Dissipation | 285mW |
| Voltage - Input(Max)(VI(off)) | - |
| Input Voltage (VI(on)@Ic,Vce) | - |
| Current - Collector(Ic) | 500mA |
100 285mW 500mA 50V 1 NPN Pre-Biased, 1 PNP Pre-Biased SC-74R-6 Bipolar Transistor Arrays, Pre-Biased RoHS