onsemi HUFA75639S3ST

onsemi · FETs & Power MOSFETs · MPN HUFA75639S3ST

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Specifications

Gate Charge(Qg)130nC@20V
Drain to Source Voltage100V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)25mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

100V 56A 4V 200W 25mΩ@10V 1 N-channel N-Channel D2PAK(TO-263AB) Single FETs, MOSFETs RoHS

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