onsemi HUF76629D3ST

onsemi · FETs & Power MOSFETs · MPN HUF76629D3ST

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Specifications

Gate Charge(Qg)39nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)214pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)33pF
RDS(on)52mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.285nF
TypeN-Channel

Technical details

N-Channel 100V 20A Surface Mount DPAK(TO-252)

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