onsemi HUF76619D3ST

onsemi · FETs & Power MOSFETs · MPN HUF76619D3ST

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Specifications

Gate Charge(Qg)29nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)138pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)20pF
RDS(on)87mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)767pF
TypeN-Channel

Technical details

100V 18A 1V 75W 87mΩ@5V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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