onsemi · FETs & Power MOSFETs · MPN HUF76609D3ST
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 425pF |
100V 10A 1 N-channel TO-252AA Single FETs, MOSFETs RoHS