onsemi HUF76113T3ST

onsemi · FETs & Power MOSFETs · MPN HUF76113T3ST

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)20.5nC@10V
Output Capacitance(Coss)310pF
Current - Continuous Drain(Id)4.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation1.1W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)31mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)625pF
TypeN-Channel

Technical details

30V 4.7A 3V 1.1W 31mΩ@10V 1 N-channel N-Channel SOT-223-4 Single FETs, MOSFETs

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