onsemi · FETs & Power MOSFETs · MPN HUF76107D3S
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| Gate Charge(Qg) | 10.3nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 35W |
| RDS(on) | 52mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 315pF |
| Type | N-Channel |
30V 20A 3V 35W 52mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs