onsemi HUF76009P3

onsemi · FETs & Power MOSFETs · MPN HUF76009P3

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)-
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation41W
RDS(on)39mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)470pF
TypeN-Channel

Technical details

20V 20A 3V 41W 39mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs

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