onsemi · FETs & Power MOSFETs · MPN HUF76009P3
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | - |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 41W |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 470pF |
| Type | N-Channel |
20V 20A 3V 41W 39mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs