onsemi · FETs & Power MOSFETs · MPN HUF75652G3
No reviews yet — be the first to review onsemi HUF75652G3.
| Gate Charge(Qg) | 475nC@20V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 515W |
| Reverse Transfer Capacitance (Crss@Vds) | 630pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.585nF |
N-Channel 100V 75A 515W Through Hole TO-247-3