onsemi · FETs & Power MOSFETs · MPN HUF75639S3STNL
No reviews yet — be the first to review onsemi HUF75639S3STNL.
| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 75nC@10V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
100V 56A 4V 200W 25mΩ@10V 1 N-channel N-Channel D2PAK(TO-263) Single FETs, MOSFETs RoHS