onsemi HUF75639S3ST

onsemi · FETs & Power MOSFETs · MPN HUF75639S3ST

No reviews yet — be the first to review onsemi HUF75639S3ST.

Specifications

Configuration-
Gate Charge(Qg)130nC@20V
Drain to Source Voltage100V
Current - Continuous Drain(Id)56A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)65pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)2nF

Technical details

100V 56A 4V 1 N-channel TO-263AB Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs