onsemi · FETs & Power MOSFETs · MPN HUF75639P3-F102
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| Gate Charge(Qg) | 130nC@20V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
100V 56A 4V 200W 1 N-channel TO-220-3 Single FETs, MOSFETs RoHS