onsemi · FETs & Power MOSFETs · MPN HUF75639G3
5.0/5 from 1 engineer review.
| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
N-Channel 100V 56A 200W Through Hole TO-247