onsemi · FETs & Power MOSFETs · MPN HUF75631SK8
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| Gate Charge(Qg) | 79nC@20V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 5.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 39mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.225nF |
| Type | N-Channel |
100V 5.5A 4V 2.5W 39mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS