onsemi · FETs & Power MOSFETs · MPN HUF75545P3
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| Gate Charge(Qg) | 235nC@20V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 270W |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
80V 75A 4V 270W 10mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS