onsemi HUF75531SK8T

onsemi · FETs & Power MOSFETs · MPN HUF75531SK8T

No reviews yet — be the first to review onsemi HUF75531SK8T.

Specifications

Drain to Source Voltage80V
Gate Charge(Qg)45nC@10V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation2.5W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)30mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.21nF
TypeN-Channel

Technical details

80V 6A 4V 2.5W 30mΩ@10V 1 N-channel N-Channel SOIC-8 Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs