onsemi HUF75344G3

onsemi · FETs & Power MOSFETs · MPN HUF75344G3

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Specifications

Gate Charge(Qg)175nC@20V
Drain to Source Voltage55V
Output Capacitance(Coss)1.17nF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation285W
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

N-Channel 55V 75A 285W Through Hole TO-247

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