onsemi HUF75339P3

onsemi · FETs & Power MOSFETs · MPN HUF75339P3

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Specifications

Gate Charge(Qg)130nC@20V
Drain to Source Voltage55V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2nF
TypeN-Channel

Technical details

55V 75A 4V 200W 12mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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