onsemi · FETs & Power MOSFETs · MPN HUF75339G3_NL
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 75nC@10V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 200W |
| RDS(on) | 12mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
| Type | N-Channel |
55V 75A 4V 200W 12mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs RoHS