onsemi · Transistors (BJTs) · MPN FSB660A
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| Current - Collector Cutoff | 10uA |
|---|---|
| Transition frequency(fT) | 75MHz |
| Collector - Emitter Voltage VCEO | 60V |
| DC Current Gain | 80 |
| Pd - Power Dissipation | 500mW |
| type | PNP |
| Current - Collector(Ic) | 2A |
| Operating Temperature | -55℃~+150℃ |
| Vce Saturation(VCE(sat)) | 300mV |
60V 80 PNP 2A SOT-23-3 Single Bipolar Transistors RoHS