onsemi FQU7P06TU

onsemi · FETs & Power MOSFETs · MPN FQU7P06TU

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)8.2nC@10V
Output Capacitance(Coss)110pF
Current - Continuous Drain(Id)5.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)450mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)295pF
TypeP-Channel

Technical details

60V 5.4A 4V 28W 450mΩ@10V 1 P-Channel P-Channel IPAK Single FETs, MOSFETs RoHS

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