onsemi · FETs & Power MOSFETs · MPN FQU20N06LTU
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| Gate Charge(Qg) | 13nC@48V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 17.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 38W |
| Reverse Transfer Capacitance (Crss@Vds) | 45pF |
| RDS(on) | 42mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 630pF |
60V 17.2A 38W Through Hole IPAK(TO-251)