onsemi · FETs & Power MOSFETs · MPN FQU10N20LTU
No reviews yet — be the first to review onsemi FQU10N20LTU.
| Gate Charge(Qg) | 17nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 125pF |
| Current - Continuous Drain(Id) | 7.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 51W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 830pF |
| Type | N-Channel |
200V 7.6A 2V 51W 360mΩ@10V 1 N-channel N-Channel IPAK Single FETs, MOSFETs RoHS