onsemi FQT7N10LTF

onsemi · FETs & Power MOSFETs · MPN FQT7N10LTF

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage100V
Output Capacitance(Coss)72pF
Current - Continuous Drain(Id)1.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)380mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)290pF
TypeN-Channel

Technical details

N-Channel 100V 1.7A 2W Surface Mount SOT-223

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