onsemi · FETs & Power MOSFETs · MPN FQT3P20TF_SB82100
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| Gate Charge(Qg) | 8nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 60pF |
| Current - Continuous Drain(Id) | 670mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 2.7Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 250pF |
| Type | P-Channel |
200V 670mA 5V 2.5W 2.7Ω@10V 1 P-Channel P-Channel SOT-223-4 Single FETs, MOSFETs RoHS