onsemi · FETs & Power MOSFETs · MPN FQT1N80TF-WS
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| Gate Charge(Qg) | 7.2nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 200mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.7pF |
| RDS(on) | 15.5Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 195pF |
800V 200mA 5V 2.1W 15.5Ω@10V 1 N-channel SOT-223-4 Single FETs, MOSFETs RoHS