onsemi · FETs & Power MOSFETs · MPN FQS4900TF
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| Current - Continuous Drain(Id) | 1.3A;300mA |
|---|---|
| RDS(on) | 550mΩ@10V |
| Pd - Power Dissipation | 2W |
| Gate Threshold Voltage (Vgs(th)) | 1.95V |
| Drain to Source Voltage | 60V;300V |
| Number | 1 N-Channel + 1 P-Channel |
| Gate Charge(Qg) | 2.1nC@5V |
| Operating Temperature | -55℃~+150℃ |
550mΩ@10V 2W 1.95V 1 N-Channel + 1 P-Channel SOP-8 FET, MOSFET Arrays RoHS