onsemi FQPF9N50CF

onsemi · FETs & Power MOSFETs · MPN FQPF9N50CF

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)170pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation44W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)850mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.03nF
TypeN-Channel

Technical details

N-Channel 500V 9A 44W Through Hole TO-220FPAB-3

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