onsemi · FETs & Power MOSFETs · MPN FQPF9N25CT
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| Drain to Source Voltage | 250V |
|---|---|
| Gate Charge(Qg) | 35nC@10V |
| Current - Continuous Drain(Id) | 8.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 38W |
| RDS(on) | 430mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 710pF |
250V 8.8A 4V 38W 430mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS