onsemi FQPF9N25C

onsemi · FETs & Power MOSFETs · MPN FQPF9N25C

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage250V
Output Capacitance(Coss)150pF
Current - Continuous Drain(Id)8.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)710pF
TypeN-Channel

Technical details

250V 8.8A 4V 38W 430mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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