onsemi · FETs & Power MOSFETs · MPN FQPF8N80C
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| Gate Charge(Qg) | 45nC@640V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 17pF |
| RDS(on) | 1.55Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.05nF |
N-Channel 800V 8A Through Hole TO-220F